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The QPD1016L is a 500 W (P3dB) pre-matched discrete Gallium Nitride on Silicon Carbide High Electron Mobility Transistor (GaN HEMT) manufactured by Qorvo. Designed for high-power RF applications, it operates across a frequency range from DC to 1.7 GHz. The device features a linear gain of 18 dB at 1.3 GHz and achieves a drain efficiency of 67% at the 3 dB compression point. It utilizes an industry-standard NI-780 air cavity package, facilitating integration into existing designs. The component supports both continuous wave and pulsed operation modes.
Verify the specific suffix against official Qorvo documentation to confirm pinout compatibility and electrical tolerances. Ensure the supplier provides traceability certificates matching the manufacturing lot. Confirm that the NI-780 package dimensions align with your PCB footprint requirements before finalizing orders.
Select this component when designing systems operating below 1.7 GHz that require high linearity and power efficiency. Compare the 18 dB gain specification against system link budget requirements. Evaluate the thermal resistance of the NI-780 package relative to your heat sink capabilities to ensure reliable operation under continuous wave conditions.
The QPD1016L belongs to Qorvo's QPD series of GaN HEMTs, which are engineered for demanding RF environments. This model specifically targets applications needing substantial power output within a standardized footprint. It complements lower-power variants in the family by offering higher wattage capabilities while maintaining broadband performance characteristics suitable for modern communication infrastructures.
QPD1016LEVB01 serves as the associated evaluation board for development purposes. Direct functional substitutes within the same package family include QPD1016 and QPD1013, though their power ratings and frequency ranges differ. Verify pin compatibility and thermal specifications before attempting any cross-referencing.