QPD2060D

Overview

The Qorvo QPD2060D is a 600µm discrete GaAs pHEMT designed for high-power RF applications. It delivers an output power of 28 dBm at the 1 dB compression point (P1dB). The device provides a gain of 12 dB and achieves a power-added efficiency (PAE) of 55% at P1dB. Manufactured using Qorvo’s standard 0.25µm power pHEMT process, it serves as a robust solution for demanding communication systems requiring reliable performance in defense and aerospace environments.

Feature Summary

• Utilizes Qorvo’s proven 0.25µm power pHEMT fabrication technology for consistent reliability
• Optimized for high output power density in discrete form factor
• Engineered to support critical mission requirements in advanced radar and electronic warfare systems

Applications

• Defense communication systems
• Advanced radar transmitters
• Electronic warfare (EW) subsystems
• Space communication payloads

Part Context

The QPD2060D belongs to Qorvo’s portfolio of GaAs pHEMT devices tailored for high-power RF amplification. It complements other discrete variants like the QPD2080D and QPD2120D, offering a specific balance of output power and efficiency suitable for mid-range power stages in complex RF front-ends used in military and aerospace platforms.

Replacement Considerations

For higher output power requirements, the QPD2080D (800µm) or QPD2120D (1200µm) may be considered. Designers should verify that the increased die size and associated thermal management capabilities align with the system constraints when substituting these larger variants.