QS5W1TR

Overview

The QS5W1TR is a dual NPN bipolar junction transistor array manufactured by ROHM Semiconductor. It features a TSMT-5 surface-mount package and supports a maximum collector-emitter voltage of 30 V with a continuous collector current of 3 A. The device offers a power dissipation rating of 1.25 W and a gain bandwidth product of 270 MHz. Key electrical characteristics include an emitter-base voltage of 6 V, a collector-emitter saturation voltage of 200 mV, and a maximum operating temperature of +150°C.

Feature Summary

• Dual NPN configuration within a compact surface-mount package
• High current handling capability up to 3 A per transistor
• Low saturation voltage for efficient switching performance
• Wide thermal operating range supporting high-temperature environments

Applications

• General-purpose switching circuits
• Driver stages for low-power loads
• Logic interface applications requiring signal amplification

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with ROHM Semiconductor or authorized distributors before integration. Confirm that the TSMT-5 footprint matches the target PCB design. Ensure thermal management strategies account for the 1.25 W power dissipation limit under actual operating conditions to maintain reliability within the specified temperature range.

Selection Notes

Select this component when a dual NPN configuration is required in a small outline package. It is suitable for applications needing moderate current drive with fast switching speeds. Compare against single-transistor alternatives if space allows, but prioritize this part for integrated dual-channel solutions. Validate that the 30 V voltage rating aligns with the system's maximum supply voltages.

Part Context

This part belongs to ROHM's lineup of small-signal bipolar transistor arrays designed for surface-mount technology. It complements other series like the QS5Y1TR, which offers mixed NPN/PNP configurations. The QS5W1TR specifically targets designs requiring two identical NPN channels in a minimal footprint, distinguishing it from single-channel MOSFETs or larger discrete transistors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.