ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 2NPN 50V 3A TSMT5
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual) Common Emitter
- Current - Collector (Ic) (Max)：3A
- Voltage - Collector Emitter Breakdown (Max)：50V
- Vce Saturation (Max) @ Ib, Ic：350mV @ 50mA, 1A
- Current - Collector Cutoff (Max)：1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 50mA, 3V
- Power - Max：1.25W
- Frequency - Transition：320MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package：TSMT5
- Grade：-
- Qualification：-
Download product information
Overview
The QS5W2TR is a dual NPN bipolar junction transistor array manufactured by ROHM Semiconductor. It features a TSMT-5 surface-mount package and supports a maximum collector-emitter voltage of 50V with a continuous collector current of 3A. The device exhibits a gain-bandwidth product of 320MHz and a power dissipation rating of 1.25W. Designed for high-speed switching applications, it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual NPN configuration in a compact TSMT-5 surface-mount package
- High-speed switching capability with 320MHz gain-bandwidth product
- Robust thermal performance supporting up to 1.25W power dissipation
Applications
- General-purpose switching circuits
- Driver transistor stages
- Logic interface applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific datasheet version matches design requirements. Ensure handling procedures comply with electrostatic discharge protocols during storage and assembly. Review RoHS compliance documentation prior to integration into final products.
Selection Notes
Select this component for designs requiring dual NPN transistors in a small footprint. Evaluate the 50V voltage rating against circuit operating conditions. Consider the 320MHz frequency response for signal integrity. Verify thermal management strategies align with the 1.25W dissipation limit under expected load conditions.
Part Context
This part belongs to ROHM's discrete transistor lineup, specifically designed for compact electronic assemblies. The TSMT-5 package facilitates automated surface-mount placement. It serves as a functional alternative to larger through-hole dual transistor configurations in space-constrained PCB layouts.
Replacement Considerations
Public sources indicate this part is not recommended for new designs. Existing designs should verify availability through legacy supply channels. Cross-reference pinouts and electrical parameters with potential substitutes from other manufacturers if redesign is necessary.
