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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.5A TSMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.5A
- Rds On (Max) @ Id, Vgs：215mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：270pF @ 10V
- Power - Max：1.25W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSMT6 (SC-95)
- Grade：-
- Qualification：-
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Overview
The QS6J1TR is a dual P-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a TSMT6 (SOT-457T) surface-mount package with six terminals. The device supports a drain-source voltage of -12V and a continuous drain current of -2A. Key electrical characteristics include a typical on-resistance of 0.2Ω at a gate-source voltage of 1.5V, 0.105Ω at 2.5V, and 0.075Ω at 4.5V. The total gate charge is typically 6.5nC, with a power dissipation rating of 1.25W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Low voltage drive capability optimized for 1.5V operation
- Dual P-channel configuration in a compact SMD package
- High reliability construction compliant with RoHS standards
Applications
- Power supply circuits
- Low voltage switching applications
- Battery protection modules
Procurement Notes
Verify the specific ordering suffix TR against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Confirm that the component status remains appropriate for the intended design lifecycle, as availability may vary based on production schedules. Ensure all technical parameters align with the latest datasheet revisions before finalizing procurement orders.
Selection Notes
Select this component when a dual P-channel solution is required for low-voltage logic interfaces or power management systems. The 1.5V drive characteristic makes it suitable for microcontrollers operating at lower supply voltages. Evaluate the thermal performance under load to ensure the 1.25W power dissipation limit is not exceeded in the target application environment.
Part Context
This part belongs to ROHM's lineup of small-signal MOSFETs designed for portable electronics and automotive applications. The TSMT6 package provides a space-efficient footprint for dense PCB layouts. It is part of a series focused on reducing power consumption through optimized gate charge and low on-resistance at reduced drive voltages.
Replacement Considerations
Check for direct pin-compatible alternatives if supply constraints exist. Verify that any substitute maintains the same -12V Vdss rating and comparable Rds(on) values at 1.5V Vgs to ensure circuit functionality remains unchanged.
