QS6J3TR

Description：MOSFET 2P-CH 20V 1.5A TSMT6
Series：-

SKU:435cb99a5d1b Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 1.5A TSMT6
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：1.5A
Rds On (Max) @ Id, Vgs：215mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：270pF @ 10V
Power - Max：1.25W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSMT6 (SC-95)
Grade：-
Qualification：-

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QS6J3TR

Overview

The QS6J3 is a dual P-channel MOSFET transistor array housed in a TSMT6 surface-mount package. It integrates two independent Pch MOSFETs within a single compact footprint to optimize board space. The device features a drain-source voltage rating of -20V and a continuous drain current capacity of -1.5A. Electrical characteristics include a low on-state resistance, with typical values ranging from 155mΩ at VGS=-4.5V to 310mΩ at VGS=-2.5V. The component supports fast switching operations and includes an integrated body diode for source-drain conduction.

Feature Summary

Dual P-channel MOSFET configuration within a single TSMT6 package
Low on-state resistance enabling efficient power switching
Fast switching speed suitable for high-frequency applications
Optimized for low-voltage drive requirements

Applications

General-purpose switch circuits
Low-voltage drive control systems
Space-constrained electronic designs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantities and tape-and-reel specifications. Confirm that the component meets all required environmental standards and reliability classifications for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component when a dual P-channel MOSFET solution is required in a minimal footprint. Ensure the application voltage does not exceed the -20V drain-source limit and that the gate-source drive voltage remains within the ±12V specification. Consider the thermal resistance of 100°C/W when designing heat dissipation strategies for continuous operation.

Part Context

This component belongs to ROHM Semiconductor's small switching transistor series. It is designed for general-purpose electronic equipment such as office automation, communications devices, and electrical appliances. The product utilizes silicon technology and is packaged in the TSMT6 form factor, which corresponds to the J03 abbreviated symbol.