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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1A TSMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Rds On (Max) @ Id, Vgs：238mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：77pF @ 10V
- Power - Max：900mW (Tc)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSMT6 (SC-95)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The QS6K1FRATR is a dual N-channel MOSFET designed for 2.5V drive applications, certified to AEC-Q101 standards for automotive reliability. It features a TSMT6 (SOT-457T) surface-mount package with six terminals. Key electrical parameters include a drain-source voltage of 30V and a continuous drain current of 1A. The typical on-resistance is 0.26Ω at VGS=2.5V, decreasing to 0.17Ω at VGS=4.5V. Total gate charge is 1.7nC, with power dissipation rated at 1.25W. Operating temperatures range from -55°C to 150°C.
Feature Summary
- Dual N-channel configuration optimized for low-voltage 2.5V driving signals
- Automotive-grade AEC-Q101 qualification ensuring high reliability
- Compact TSMT6 surface-mount package suitable for space-constrained designs
- Fast switching characteristics with low total gate charge
Applications
- Automotive electronic control units requiring AEC-Q101 compliance
- Low-voltage load switching in vehicle systems
- General-purpose power management in compact electronic devices
Procurement Notes
Verify the specific ordering suffix FRATR against the manufacturer's latest datasheet to confirm tape-and-reel packaging and quantity specifications. Ensure that the component status remains acceptable for your production timeline, as availability may be subject to change for end-of-life products.
Selection Notes
Select this component when a dual N-channel MOSFET is required for 2.5V logic-level driving in automotive or industrial environments. The low on-resistance at 2.5V makes it suitable for efficient power switching where standard logic-level MOSFETs may exhibit higher losses. Confirm package compatibility with the TSMT6 footprint during PCB layout.
Part Context
The QS6K1FRATR belongs to ROHM's series of 2.5V-driven dual N-channel MOSFETs. It shares similar electrical characteristics with the QS6K1 but differs in packaging and ordering suffixes. This part is positioned for applications needing automotive certification and compact form factors, serving as a specialized solution for low-voltage power control.
Replacement Considerations
The US6K1 is listed as a similar specification replacement option. Verify pinout compatibility and electrical parameter alignment before substitution. The US6K1 offers different on-resistance values and may require design adjustments for equivalent performance.
