QS6K1TR

$0.90

Description：MOSFET 2N-CH 30V 1A TSMT6
Series：-

SKU:146078db1c65 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 1A TSMT6
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：1A
Rds On (Max) @ Id, Vgs：238mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：77pF @ 10V
Power - Max：1.25W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSMT6 (SC-95)
Grade：-
Qualification：-

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QS6K1TR

Overview

The QS6K1TR is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a TSMT6 (SOT-457T) surface-mount package with dimensions of 2.8x2.9 mm and a thickness of 1.0 mm. The device supports a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 1 A. Typical on-resistance (R_DS(on)) values are 0.26 Ω at V_GS = 2.5 V, 0.18 Ω at V_GS = 4 V, and 0.17 Ω at V_GS = 4.5 V. The total gate charge (Q_g) is typically 1.7 nC, with power dissipation rated at 1.25 W. Operating temperatures range from -55°C to 150°C.

Feature Summary

Optimized for 2.5 V drive voltage operation
Dual N-channel configuration in a compact SMD package
Fast switching speed capabilities
Lead-free construction compliant with RoHS standards

Applications

Battery-powered portable devices
DC-DC converter circuits
Motor control applications

Procurement Notes

Verify the specific ordering suffix TR against official documentation to confirm taping specifications. Confirm supply status as Not Recommended for New Designs (NRND) before finalizing component selection. Ensure compatibility with existing design constraints due to limited future availability for new projects.

Selection Notes

Select this component when a dual N-channel MOSFET with low gate charge and fast switching is required for space-constrained designs. Evaluate thermal performance based on the 1.25 W power dissipation rating and ensure the PCB layout supports the TSMT6 package dimensions. Verify that the 30 V breakdown voltage meets the circuit requirements.

Part Context

The QS6K1TR belongs to ROHM's series of small-signal MOSFETs intended for portable electronics. It utilizes the SOT-457T JEITA package standard. The product is currently designated as NRND, meaning it is produced only to support existing customers and is not available for new design introductions.