QS6M3TR

$0.75

Description：MOSFET N/P-CH 30V/20V 1.5A TSMT6
Series：-

SKU:4216cd564af1 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V/20V 1.5A TSMT6
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V, 20V
Current - Continuous Drain (Id) @ 25°C：1.5A
Rds On (Max) @ Id, Vgs：230mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：80pF @ 10V
Power - Max：1.25W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSMT6 (SC-95)
Grade：-
Qualification：-

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QS6M3TR

Overview

The QS6M3TR is a dual-channel MOSFET containing one N-channel and one P-channel transistor in a TSMT6 (SOT-457T) surface-mount package. It features a low on-resistance design optimized for 2.5V drive applications, with typical RDS(on) values of 0.26Ω at VGS=2.5V for both channels. The device includes built-in gate-source protection diodes and body diodes. Key electrical ratings include a drain-source voltage of ±30V, continuous drain current of ±1.5A, and total power dissipation of 1.25W. Total gate charge is typically 1.6nC for the N-channel and 3.0nC for the P-channel.

Feature Summary

Low on-resistance optimized for 2.5V drive operation
Built-in gate-source protection diodes for ESD robustness
Compact TSMT6 surface-mount package

Applications

Power switching circuits
DC/DC converters

Procurement Notes

Verify the specific ordering suffix to confirm tape-and-reel packaging quantities. Ensure compatibility with RoHS standards if required by your manufacturing process. Confirm that the component status aligns with your production timeline needs before finalizing orders.

Selection Notes

Select this component when a complementary N/P pair is needed in a single small footprint. The 2.5V drive capability makes it suitable for low-voltage logic interfaces. Verify thermal management requirements as the total power dissipation is limited to 1.25W.

Part Context

This part belongs to ROHM's small switching transistor series designed for compact power management solutions. The TSMT6 package allows for high-density PCB layouts. It serves as a complementary pair solution for bridge drivers or load switches where space is constrained.