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The QS8J1TR is a dual P-channel MOSFET manufactured by ROHM Semiconductor, housed in an 8-terminal TSMT8 surface-mount package. It features a -12V drain-source voltage rating and a continuous drain current of -4.5A. The device supports low-voltage drive applications with a specified gate-source voltage of -1.5V. At this drive level, the typical on-resistance is 98mΩ. Electrical characteristics include a total gate charge of 4.5nC and a forward transfer admittance of 6.5S at -4.5V. Thermal resistance from channel to ambient is rated at 83.3°C/W for the total device.
Verify the specific ordering suffix TR against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets RoHS compliance standards required for your manufacturing process. Cross-reference the datasheet revision date to guarantee access to the most recent electrical parameters and thermal ratings before finalizing procurement orders.
Select the QS8J1TR when system requirements demand a dual P-channel solution capable of operating with low gate drive voltages. Evaluate the 98mΩ on-resistance at -1.5V to ensure it aligns with efficiency targets. Confirm that the TSMT8 package dimensions fit the available PCB real estate and verify that the 1.5W total power dissipation rating accommodates the expected thermal load under continuous operation conditions.
This component belongs to ROHM's lineup of silicon P-channel MOSFETs designed for general-use electronic equipment. It serves as a discrete semiconductor switch suitable for consumer electronics, office automation, and communication devices. The product is not intended for radiation-tolerant or high-reliability safety-critical applications such as aerospace or medical instrumentation.
Consult ROHM technical support for verified direct replacements. Ensure any substitute maintains identical pinout compatibility, specifically the TSMT8 package arrangement. Verify that alternative components meet the same -12V breakdown voltage and -4.5A current ratings to prevent circuit failure.