QS8J1TR

QS8J1TR

$1.45
  • Description:MOSFET 2P-CH 12V 4.5A TSMT8
  • Series:-

SKU:f2d7cbbaa23e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2P-CH 12V 4.5A TSMT8
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:4.5A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:2450pF @ 6V
  • Power - Max:1.5W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:TSMT8
  • Grade:-
  • Qualification:-

Download product information

QS8J1TR

Overview

The QS8J1TR is a dual P-channel MOSFET manufactured by ROHM Semiconductor, housed in an 8-terminal TSMT8 surface-mount package. It features a -12V drain-source voltage rating and a continuous drain current of -4.5A. The device supports low-voltage drive applications with a specified gate-source voltage of -1.5V. At this drive level, the typical on-resistance is 98mΩ. Electrical characteristics include a total gate charge of 4.5nC and a forward transfer admittance of 6.5S at -4.5V. Thermal resistance from channel to ambient is rated at 83.3°C/W for the total device.

Feature Summary

  • Dual P-channel configuration within a single compact package
  • Optimized for low-voltage drive operations at 1.5V
  • High power dissipation capability relative to package size

Applications

  • General-purpose switching circuits
  • Low-voltage power supply modules
  • Battery-powered electronic devices

Procurement Notes

Verify the specific ordering suffix TR against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets RoHS compliance standards required for your manufacturing process. Cross-reference the datasheet revision date to guarantee access to the most recent electrical parameters and thermal ratings before finalizing procurement orders.

Selection Notes

Select the QS8J1TR when system requirements demand a dual P-channel solution capable of operating with low gate drive voltages. Evaluate the 98mΩ on-resistance at -1.5V to ensure it aligns with efficiency targets. Confirm that the TSMT8 package dimensions fit the available PCB real estate and verify that the 1.5W total power dissipation rating accommodates the expected thermal load under continuous operation conditions.

Part Context

This component belongs to ROHM's lineup of silicon P-channel MOSFETs designed for general-use electronic equipment. It serves as a discrete semiconductor switch suitable for consumer electronics, office automation, and communication devices. The product is not intended for radiation-tolerant or high-reliability safety-critical applications such as aerospace or medical instrumentation.

Replacement Considerations

Consult ROHM technical support for verified direct replacements. Ensure any substitute maintains identical pinout compatibility, specifically the TSMT8 package arrangement. Verify that alternative components meet the same -12V breakdown voltage and -4.5A current ratings to prevent circuit failure.

QS8J1TRQS8J1TR
$1.45
Buy Now