QS8K11TCR

Overview

The QS8K11TCR is a dual N-channel silicon MOSFET manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 3.5 A. The device exhibits a typical on-resistance of 50 mΩ at a gate-source voltage of 4 V, with a maximum power dissipation of 1.5 W. Key switching parameters include a total gate charge of 7 nC, a fall time of 7 ns, and a rise time of 25 ns. The component operates within a temperature range of -55°C to +150°C and is designed for low-voltage drive applications.

Feature Summary

• Dual N-channel configuration optimized for compact circuit designs
• Low on-resistance characteristics supporting efficient power switching
• Fast switching speeds suitable for high-frequency operations

Applications

• General-purpose switching circuits
• Power supply modules
• Motor driver interfaces

Procurement Notes

Verify the supply status before procurement as the component is marked NRND (Not Recommended for New Designs). Confirm that the TSMT-8 package dimensions and pinout match the target PCB layout. Ensure compatibility with existing design constraints given the end-of-life recommendation.

Selection Notes

Select this part for applications requiring a 30 V dual N-channel MOSFET with moderate current handling. Compare the 50 mΩ on-resistance against thermal requirements. Consider alternative models if new design support is required due to the NRND status.

Part Context

This component belongs to ROHM's series of small-signal and medium-power MOSFETs designed for surface-mount technology. It shares the TSMT-8 package form factor with other devices in the lineup, facilitating standardized footprint usage across various product lines.

Replacement Considerations

QS8K13TCR offers higher current capacity (6 A) and lower on-resistance (28 mΩ) in the same TSMT-8 package.