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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：390pF @ 10V
- Power - Max：550mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QS8K13TCR is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 6 A. The device exhibits a typical on-resistance of 28 mOhms at a gate-source voltage of 4 V. Key switching parameters include a total gate charge of 5.5 nC, with rise and fall times of 40 ns and 7 ns, respectively. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1.5 W.
Feature Summary
- Dual N-channel configuration for integrated circuit design
- Optimized for low-voltage drive applications
- High-speed switching capability with low gate charge
Applications
- DC/DC converters
- Motor drivers
- General-purpose switching circuits
Procurement Notes
Verify the component status before procurement as it is marked NRND (Not Recommended for New Designs). Confirm that the TSMT-8 package dimensions and pinout match the target PCB layout. Ensure thermal management strategies account for the 1.5 W power dissipation limit under expected operating conditions.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30 V rating and 6 A current capacity is required. Compare the 28 mOhm on-resistance against system efficiency targets. Consider the 5.5 nC gate charge for driver selection and switching frequency limitations in the specific application environment.
Part Context
This part belongs to ROHM's series of dual N-channel MOSFETs designed for compact power management solutions. The TSMT-8 package provides a small footprint suitable for space-constrained designs. It serves as an alternative to single-channel configurations where two switches are needed in close proximity.
Replacement Considerations
Check for direct substitutes within the same ROHM family or equivalent parts from other manufacturers offering identical 30 V, 6 A specifications in a TSMT-8 package. Verify pin compatibility and electrical parameter equivalence before substitution.
