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The QS8K51TR is a dual N-channel small-signal MOSFET from ROHM Semiconductor, housed in the TSMT8 surface-mount package. It features a drain-source voltage of 100V and a continuous drain current of 2.0A. The typical on-resistance is 0.26Ω at 4V gate drive and 0.25Ω at 4.5V. Total gate charge is typically 4.7nC with a power dissipation rating of 1.5W. This component is designated as End-of-Life, indicating it is no longer recommended for new designs.
Verify the End-of-Life status before procurement planning. Confirm availability through last-time-buy channels or authorized distributors. Ensure supply chain continuity strategies account for potential obsolescence. Validate that existing inventory meets project requirements without future replenishment options.
Consider the 100V rating and 2.0A current capacity for low-power switching tasks. Evaluate thermal management given the 1.5W dissipation limit in the TSMT8 package. Assess compatibility with 4V to 4.5V drive voltages for optimal on-resistance performance. Review alternative components if long-term production support is required.
The QS8K51 belongs to a family of dual MOSFETs designed for space-constrained applications. It shares the TSMT8 footprint with similar devices like the QH8K51. The product line targets motor control and general-purpose switching where low on-resistance is critical.
The QH8K51 is listed as a similar level part with the same pinout and package. Verify electrical parameter differences before substitution. Check for updated manufacturing status and availability compared to the obsolete QS8K51.