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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.5A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.5A
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
Download product information
Overview
The QS8M11TCR is a dual N-channel silicon MOSFET manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage of 30 V and a continuous drain current of 3.5 A. The typical on-resistance is 0.05 Ω at a 4 V gate drive. Key electrical parameters include a total gate charge of 3.3 nC and power dissipation of 1.5 W. The device operates within a temperature range of -55°C to +150°C and is designed for low-voltage switching applications.
Feature Summary
- Optimized for 4V drive voltage operation to support low-power logic interfaces.
- Dual N-channel configuration integrated into a compact TSMT-8 surface-mount package.
- Fast switching characteristics suitable for high-frequency circuit applications.
Applications
- General purpose switching circuits
- Low-voltage DC-DC converter stages
- Motor driver output stages
Procurement Notes
Verify the supply status before integration, as this component may be designated as End-of-Life or Not Recommended for New Designs. Confirm that the TSMT-8 package dimensions and pinout align with existing PCB footprints. Ensure compliance with RoHS directives if required by the target market regulations.
Selection Notes
Select this part when a dual N-channel solution is required with a 30V rating and 4V logic compatibility. Compare the 0.05 Ω on-resistance against thermal constraints to ensure adequate heat dissipation within the 1.5 W power limit. Verify that the 3.3 nC gate charge matches the driving capability of the control signal source.
Part Context
This component belongs to ROHM's series of small-signal power MOSFETs designed for space-constrained designs. It serves as a direct replacement for the QS8M11A in compatible layouts. The TSMT-8 package provides an efficient thermal path while maintaining a minimal footprint for dense board arrangements.
Replacement Considerations
The QH8MA2TCR is documented as a similar level replacement with the same pinout and package. Verify that the QH8MA2's higher current rating and different on-resistance specifications meet the specific circuit requirements before substitution.
