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The QS8M13TCR is a dual N-channel MOSFET manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 6 A. The device exhibits a typical on-resistance (Rds(on)) of 28 mΩ at Vgs = 4.5 V. Key electrical parameters include a gate-source voltage range of ±20 V, a threshold voltage (Vgs(th)) of 2.5 V, and a total gate charge (Qg) of 5.5 nC. Power dissipation is rated at 1.5 W, with an operating temperature range from -55°C to +150°C.
Verify the specific datasheet revision and RoHS compliance status directly with ROHM Semiconductor or authorized distributors before integration. Confirm that the TSMT-8 package dimensions align with your PCB footprint requirements. Ensure design margins account for the 1.5 W power dissipation limit under expected thermal conditions.
Select this component when a dual N-channel solution is required for 30 V systems with moderate current demands around 6 A. Compare Rds(on) values against alternative packages if lower conduction losses are critical. Verify compatibility with 4V–5V logic drivers given the specified threshold and gate charge characteristics.
This part belongs to ROHM's series of small-signal and power MOSFETs designed for surface-mount assembly. The TSMT-8 package provides a balance between current handling capability and board space efficiency. It is distinct from complementary N+P variants and higher-voltage P-channel options within the same manufacturer lineup.
Publicly confirmed substitute part numbers for QS8M13TCR were not identified in the provided source material. Consult ROHM Semiconductor documentation for direct pin-compatible alternatives or cross-reference guides.