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The QSX7TR is a dual NPN bipolar junction transistor array manufactured by Rohm Semiconductor. It features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 12V. The device operates with a transition frequency of 400MHz and has a maximum power dissipation of 500mW. DC current gain (hFE) is specified at a minimum of 270 when tested at 200mA and 2V. The saturation voltage is rated at a maximum of 200mV under conditions of 25mA base current and 500mA collector current. The component utilizes a TSMT6 (SC-95) surface-mount package and supports a junction temperature up to 150°C.
Verify the specific ordering suffix to ensure the correct packaging format, as the TR designation indicates tape and reel supply. Confirm RoHS3 compliance status through the official datasheet before integration into environmentally regulated assemblies. Check for any recent product change notices regarding package updates or material substitutions that may affect long-term sourcing strategies.
Select this component when a dual NPN topology is required in a space-constrained design. Ensure the 12V voltage rating aligns with the circuit's operational limits. Verify that the 1.5A current capacity meets the load requirements. Consider the TSMT6 package dimensions during PCB layout planning to ensure adequate clearance and thermal management for the 500mW power dissipation limit.
This part belongs to the QSX7 family of dual NPN transistor arrays from Rohm Semiconductor. It serves as a discrete alternative to integrated logic gates where analog switching characteristics are preferred. The SC-95 package offers a small footprint suitable for portable electronics and dense board layouts.
Consult the manufacturer's official substitution guide for verified equivalents. Cross-referencing requires matching the dual NPN configuration, 12V rating, and TSMT6 package constraints.