R6076ENZ1C9

Description：MOSFET N-CH 600V 76A TO247
Series：-
Mfr：Rohm Semiconductor
Package：Tube

SKU:de817086215b Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

R6076ENZ1C9 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 600V 76A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for R6076ENZ1C9

Description：MOSFET N-CH 600V 76A TO247
Series：-
Mfr：Rohm Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：42mOhm @ 44.4A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：120W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for R6076ENZ1C9

R6076ENZ1C9

Single FETs, MOSFETs Overview

The R6076ENZ1C9 is a third-generation N-channel power MOSFET manufactured by ROHM Semiconductor. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 76A. The device utilizes a TO-247 package for through-hole mounting, providing a power dissipation capacity of 735W. Key electrical characteristics include a typical on-resistance of 38mΩ at 10V gate drive and a total gate charge of 260nC. The component operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Third-generation silicon technology designed for low noise performance
High thermal efficiency with 735W power dissipation capability in TO-247 package
Low on-resistance optimized for high-current switching applications

Single FETs, MOSFETs Applications

Motor control systems
Power inverters
Industrial switching power supplies

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status of the base part number R6076ENZ1 before procurement. Confirm that the C9 suffix denotes the specific bulk packaging format required for your assembly line. Ensure compatibility with the recommended replacement R6076ENZ4 if supply continuity is critical for long-term production.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling up to 76A with moderate switching speeds. The 10V drive requirement aligns with standard logic-level drivers. Consider the 260nC gate charge when designing gate drive circuits to ensure adequate current sourcing capabilities for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's third-generation N-channel MOSFET lineup, which focuses on improving figure-of-merit for power loss reduction. The TO-247AD package code indicates a standard leaded configuration suitable for heatsink mounting. It serves as a legacy option compared to newer fourth-generation devices offering lower resistance values.