R6535ENZ4C13

$3.90

Description：650V 35A TO-247, LOW-NOISE POWER
Series：-
Mfr：Rohm Semiconductor
Package：Tube

SKU:54fbe0acec63 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

R6535ENZ4C13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is 650V 35A TO-247, LOW-NOISE POWER. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for R6535ENZ4C13

Description：650V 35A TO-247, LOW-NOISE POWER
Series：-
Mfr：Rohm Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：115mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id：4V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：379W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247G
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for R6535ENZ4C13

R6535ENZ4C13

Single FETs, MOSFETs Overview

The R6535ENZ4C13 is a third-generation super junction MOSFET manufactured by ROHM Semiconductor. It features an N-channel configuration housed in a TO-247G-3 through-hole package. Key electrical parameters include a drain-source voltage of 650 V and a continuous drain current of 35 A. The device exhibits a typical on-resistance of 115 mOhms at a gate-source voltage of 10 V, with a total gate charge of 110 nC. It supports a maximum power dissipation of 379 W and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Third-generation super junction technology designed for low noise performance
Optimized for ease of use in noise-sensitive applications
Through-hole mounting capability via TO-247G-3 package

Single FETs, MOSFETs Applications

Audio equipment requiring low noise operation
Lighting devices sensitive to electromagnetic interference
General-purpose power supply circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix C13 against official ROHM documentation to confirm tube packaging details. Ensure the component matches the TO-247G-3 footprint requirements for your PCB design. Cross-reference the datasheet revision date to guarantee compatibility with your system's thermal and electrical specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when low switching noise is critical, such as in audio or precision lighting systems. The 650V rating suits high-voltage AC/DC conversion stages. Compare the 115 mOhm on-resistance against alternative fast-switching variants if higher efficiency outweighs noise concerns in your specific topology.

Single FETs, MOSFETs Part Context

This part belongs to the R6xxxENx series, which focuses on low-noise characteristics. It utilizes silicon super junction technology to balance conduction losses and switching performance. The device is intended for general industrial and consumer electronics rather than automotive applications, adhering to standard reliability grades.