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The RB085BGE-40TL is a silicon Schottky barrier rectifier manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 45 V and an average rectified forward current of 10 A. Key electrical parameters include a maximum forward voltage of 550 mV at 5 A, a peak forward surge current of 50 A, and a maximum reverse current of 100 uA at 40 V. It operates within a junction temperature range up to +150°C.
Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm RoHS compliance status via the manufacturer's official datasheet before integration. Ensure storage conditions adhere to specified limits to maintain lead integrity. Validate package marking against official specifications to prevent installation errors.
Select this component when a 10 A current rating and 40 V blocking voltage are required in a compact SMD footprint. The TO-252-3 package offers thermal performance suitable for moderate power dissipation. Consider the dual common cathode topology if space constraints prohibit discrete single-diode arrangements in bridge configurations.
This part belongs to the RB085BGE series of Schottky barrier rectifiers designed for general-purpose switching applications. The series utilizes silicon technology to provide fast switching speeds and low recovery charge. The TO-252-3 package provides robust mechanical stability and efficient heat dissipation compared to smaller surface-mount alternatives.
Direct pin-compatible substitutes within the same series include RB085BM-40TL and RB095BGE-40TL. Verify that alternative packages meet thermal resistance requirements. Ensure reverse voltage and current ratings exceed original design margins.