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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 60V 5A TO-252GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：60 V
- Current - Average Rectified (Io) (per Diode)：5A
- Voltage - Forward (Vf) (Max) @ If：580 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：300 µA @ 60 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252GE
- Grade：-
- Qualification：-
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Overview
The RB085BGE-60TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-252-3 surface-mount package. The device supports a maximum repetitive reverse voltage of 60 V and an average forward current of 10 A per diode. Key electrical parameters include a maximum forward voltage of 580 mV at 5 A, a peak forward surge current of 50 A, and a maximum reverse leakage current of 300 nA. The component operates within a junction temperature range up to +150°C.
Feature Summary
- Dual anode common cathode configuration for flexible circuit integration
- Low forward voltage drop characteristics for improved efficiency
- High thermal stability with a maximum junction temperature of +150°C
Applications
- General-purpose rectification in power supply circuits
- DC-DC converter freewheeling applications
- Reverse polarity protection in electronic systems
Procurement Notes
Verify the specific suffix 'TL' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the exact voltage and current ratings required for the target application. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Selection Notes
Select this component when a dual-diode arrangement in a single surface-mount package is required. The TO-252-3 package provides adequate thermal dissipation for 10 A continuous operation. Consider the 60 V reverse voltage rating relative to the system's peak transient voltages to ensure reliable blocking performance under all operating conditions.
Part Context
This component belongs to the RB085BGE series of Schottky barrier diodes from ROHM Semiconductor. The series utilizes silicon technology to provide low forward voltage and high reliability. The RB085BGE-60TL variant specifically offers a 60 V reverse voltage rating, distinguishing it from other series members with different voltage capabilities such as the 30 V or 40 V variants.
Replacement Considerations
Direct functional substitutes within the same series include the RB085BGE-30TL and RB085BGE-40TL, which share identical packaging and current ratings but differ in reverse voltage specifications. Verify that the alternative part's voltage rating meets or exceeds the original design requirements.
