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The RB085BGE-90TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 90V and an average rectified forward current of 6A. Key electrical parameters include a maximum forward voltage of 750mV at 3A, a peak surge forward current of 50A, and a maximum reverse current of 150µA at 90V. It operates within a junction temperature range up to +150°C.
Verify the specific suffix 'TL' against the manufacturer's official datasheet to confirm tape and reel packaging specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the exact part number with authorized distributors to avoid counterfeit components. Confirm that the TO-252-3 footprint matches your PCB design constraints before finalizing procurement orders.
Select this component when a 90V blocking capability and 6A continuous current rating are required in a compact surface-mount form factor. The dual anode common cathode arrangement allows for use in bridge configurations or synchronous rectification setups without requiring additional discrete components. Consider the thermal performance of the DPAK package for high-current applications.
This component belongs to the RB085BGE series of Schottky barrier diodes from ROHM Semiconductor. The series is designed for low forward voltage and high reliability in general rectification applications. The RB085BGE-90TL specifically denotes the 90V variant within this lineup, sharing similar structural characteristics with other voltage ratings in the family while differing in breakdown specifications.
Publicly confirmed substitute part numbers for the RB085BGE-90TL were not found in the provided source material. Verify compatibility with alternative Schottky diodes having matching voltage, current, and package specifications through official manufacturer cross-reference tools.