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The RB085BM-30TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 35 V and a continuous forward current of 4 A per diode. Key electrical parameters include a maximum forward voltage of 480 mV at 4 A, a peak forward surge current rating of 50 A, and a maximum reverse leakage current of 300 µA. The component is designed for operation up to a maximum junction temperature of +150°C.
Verify the specific suffix TL against official datasheets to confirm tape-and-reel packaging requirements. Confirm RoHS compliance status through the manufacturer's latest documentation. Check for end-of-life notices as availability may be restricted. Ensure the ordering part number matches the exact voltage and current ratings required for the design.
Select this component when a dual common cathode arrangement is required in a DPAK package. Compare the 4 A average forward current rating against circuit load requirements. Evaluate the 480 mV forward voltage drop for efficiency needs. Consider the 35 V reverse voltage rating relative to the maximum circuit operating voltage.
This component belongs to the RB085BM series of silicon Schottky barrier diodes from ROHM Semiconductor. The series offers various voltage ratings including 30 V, 40 V, and higher variants. These devices are characterized by low forward voltage and high reliability for general rectification purposes.
Verify pinout compatibility with the TO-252-3 package before substitution. Check that alternative parts meet or exceed the 4 A current and 35 V voltage ratings. Confirm similar forward voltage and leakage current specifications for equivalent performance.
The maximum operating junction temperature is +150°C.
Official documentation indicates this specific standard version is not recommended for automotive equipment; check for FH suffix variants if automotive qualification is required.
It contains two Schottky diodes arranged in a dual anode common cathode configuration.