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The RB085T-60NZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual common cathode configuration housed in a TO-220FN (3-pin) package. The device supports an average rectified forward current of 10 A and a repetitive reverse voltage of 60 V. Key electrical parameters include a maximum forward voltage of 0.58 V at 5 A, a peak non-repetitive forward surge current of 100 A, and a maximum reverse leakage current of 0.3 mA at 60 V. It operates with a junction temperature range up to +150°C.
Verify the specific suffix C9 against official documentation to confirm exact ordering specifications. Confirm RoHS compliance status as required by project standards. Check availability status, as this component may be designated as not recommended for new designs. Ensure the TO-220FN package matches thermal and mechanical constraints. Validate that the 60V rating aligns with system voltage requirements.
Select this component when a dual common cathode Schottky diode is required in a through-hole TO-220FN package. The 10A current rating and 60V breakdown voltage define its operational limits. Consider the low forward voltage drop for efficiency. Verify compatibility with existing PCB footprints designed for the TO-220FN form factor. Assess thermal management needs based on the 150°C junction temperature limit.
This part belongs to the RB085 series of Schottky barrier diodes from ROHM Semiconductor. The series offers various voltage ratings and packages. The RB085T-60NZC9 specifically targets applications requiring robust rectification in a standard leaded package. It shares architectural similarities with other RB085 variants but differs in voltage and packaging specifics.
Public confirmed substitute part numbers are not available in the provided data.