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The RB088BGE-30TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features a dual anode common cathode configuration with a 30 V reverse voltage rating and a 35 V repetitive peak reverse voltage. The device supports a 10 A average forward current and a 50 A surge forward current. Key electrical characteristics include a maximum forward voltage of 720 mV at 5 A and a low reverse leakage current of 3 µA. It operates up to a junction temperature of +150 °C.
Verify the specific suffix TL against official documentation to confirm reel packaging specifications. Ensure the component meets RoHS requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability status and lead times before finalizing procurement plans.
Select this component when a low-profile surface-mount Schottky diode is required for high-current applications. The TO-252-3 package offers robust thermal performance compared to smaller SMD options. Consider the 30 V rating and 10 A current capacity to ensure adequate headroom for your specific power supply design constraints.
This component belongs to the RB088BGE series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its ultra-low reverse leakage current and fast switching capabilities. These devices are designed for use in various power management applications where efficiency and reliability are critical factors.
The RB088BM-30FHH is listed as a recommended replacement with the same pinout and package. Verify that the replacement meets all original electrical specifications and thermal requirements before implementation.