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The RB088BGE-60TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60 V and an average forward current rating of 6 A. The device exhibits a typical forward voltage of 580 mV at 5 A and a maximum reverse leakage current of 300 uA. It supports a forward surge current of 50 A and operates at junction temperatures up to +150 C.
Verify the specific suffix TL against official datasheets to confirm reel packaging specifications. Ensure the component meets RoHS and REACH compliance requirements for your region. Cross-reference the manufacturer part number RB088BGE-60TL with authorized distributor catalogs to confirm availability and authenticity before procurement.
Select this component when a 60 V reverse voltage rating and 6 A continuous current capacity are required in a compact SMD form factor. The dual anode common cathode structure allows for efficient use of board space in bridge or center-tapped configurations. Consider the 580 mV forward voltage for thermal management calculations in high-efficiency designs.
This part belongs to the RB088BGE series of Schottky barrier diodes designed for general-purpose and automotive applications. The series offers various voltage ratings and current capacities within the same TO-252 package family, ensuring design consistency across different power levels while maintaining low forward voltage and leakage current characteristics.
Direct substitutes include RB095BGE-60TL (higher current) or RB088BGE-100TL (higher voltage). Verify pinout compatibility and thermal dissipation requirements when substituting with other ROHM dual Schottky diodes in the TO-252 package.