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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 100V 5A TO252GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：5A
- Voltage - Forward (Vf) (Max) @ If：870 mV @ 5 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 µA @ 100 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252GE
- Grade：-
- Qualification：-
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Overview
The RB088BGE100TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 10 A. The device exhibits a maximum forward voltage of 0.87 V at 5 A and a maximum reverse current of 5 mA at 100 V. It supports a non-repetitive peak forward surge current of 50 A and operates within a junction temperature range up to +150 °C.
Feature Summary
- Dual anode common cathode configuration for efficient power management
- Super low reverse leakage current characteristics
- Power mold type construction for high reliability
- Surface mount installation style compatible with automated assembly
Applications
- Switching power supplies
- General purpose rectification circuits
- DC-DC converter output stages
Procurement Notes
Verify the complete part number including the TL suffix to confirm tape and reel packaging specifications. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the component meets automotive qualification requirements if intended for vehicle applications, as standard grades may not be suitable for such environments.
Selection Notes
Select this component for designs requiring a 100 V rating with 10 A continuous current handling in a compact DPAK footprint. Consider the thermal performance and forward voltage drop at expected load currents. Verify that the operating junction temperature remains within the specified maximum limit under all anticipated conditions.
Part Context
This component belongs to the RB088 series of Schottky barrier diodes from ROHM Semiconductor. The series includes various voltage ratings and packages, with the BGE variant specifically denoting the TO-252 package form factor. The RB088BGE100TL represents the 100 V version within this specific package line.
Replacement Considerations
The RB088BM200TL is listed as a similar level replacement with the same pinout and package, though it features a higher voltage rating of 200 V. Verify electrical parameter compatibility before substitution.
