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The RB088BM-60FHH is a silicon epitaxial planar Schottky barrier diode with AEC-Q101 qualification. It features a cathode common dual configuration in a TO-252 (DPAK) package. Key electrical parameters include a repetitive peak reverse voltage of 60V, an average rectified forward current of 10A per diode, and a peak forward surge current of 50A. The maximum forward voltage is 0.83V at 5A, while the reverse current is limited to 3μA at 60V. The device supports a junction temperature up to 175°C and operates within a storage range of -55°C to 175°C.
Verify the specific ordering suffix TL against the latest official ROHM documentation to confirm tape and reel packaging details. Ensure that the component meets all required automotive standards for the intended application environment. Cross-reference the datasheet revision number to validate thermal resistance values and absolute maximum ratings before finalizing procurement specifications.
Select this component for applications requiring high reliability and low reverse leakage in automotive environments. The TO-252 package facilitates surface mount assembly. Consider the 175°C junction temperature capability for high-temperature operation scenarios. Verify that the 60V reverse voltage rating provides adequate margin for the specific circuit design requirements.
This part belongs to the RB088BM series of ultra-low IR Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed for switching power supply applications with a focus on automotive-grade reliability. The RB088BM-60FHH variant specifically offers a 60V reverse voltage rating in a DPAK package.
RB088BM-60FHHTL is the recommended replacement for the discontinued RB088BM-60FH. Both share identical pinouts, packages, and electrical characteristics.