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The RB088BM100FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 (DPAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 110 V and a continuous forward current rating of 10 A per diode. The device exhibits a typical forward voltage of 870 mV at 5 A and a low reverse leakage current of 5 µA at 100 V. Designed for high reliability, it holds AEC-Q101 automotive qualification and supports junction temperatures up to +150°C.
Verify the specific suffix 'TL' corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm that the component status remains acceptable for your design lifecycle, as some variants in this series may carry non-recommended-for-new-designations. Ensure compatibility with standard SMD reflow profiles specified in the official datasheet.
Select this component when a dual-diode arrangement is necessary within a single DPAK footprint to save board space. The 10 A current rating suits moderate-power applications, while the 100 V reverse voltage provides adequate margin for 48 V systems. Consider the thermal resistance of the TO-252 package for heat dissipation requirements in enclosed environments.
This part belongs to the RB088 series of Schottky barrier diodes from ROHM, specifically engineered for automotive electronics. The series emphasizes low leakage current and robust performance. The RB088BM variant utilizes the TO-252 package, distinguishing it from the higher-current NS series which uses larger packages like TO-263.
The RB088BM100FH is listed as a similar level part with the same pinout and package but differs in packing type. Verify if the specific reel or cut-tape format of the FHTL suffix is critical for your manufacturing line before substituting.