RB088BM100FNSTL

Overview

The RB088BM100FNSTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-252 (DPAK) surface-mount package. The device supports a repetitive peak reverse voltage of 110 V and a standard reverse voltage of 100 V. It provides an average rectified forward current of 10 A per diode under specified thermal conditions, with a peak forward surge current rating of 50 A. The maximum junction temperature reaches 175 °C.

Feature Summary

• Ultra-low reverse leakage current characteristics
• High reliability power mold type construction
• Cathode common dual element configuration

Applications

• Switching power supplies

Procurement Notes

Verify the specific ordering suffix to confirm packaging details. The TL suffix indicates embossed tape and reel packaging with a quantity of 2500 pieces. Ensure compatibility with standard surface mount assembly processes. Confirm that the application environment remains within the specified operating temperature range to maintain product integrity and performance standards.

Selection Notes

Select this component for applications requiring high-speed switching with low forward voltage drop. The TO-252 package facilitates efficient heat dissipation through the exposed tab. Consider the thermal resistance values when designing the printed circuit board layout. Ensure adequate derating is applied based on ambient temperature conditions to prevent thermal runaway during operation.

Part Context

This part belongs to the RB088 series of ultra-low IR Schottky barrier diodes from ROHM Semiconductor. The series utilizes silicon epitaxial planar technology to achieve superior electrical performance. The RB088BM100FNS variant specifically targets general-purpose electronics where high reliability and compact surface-mount solutions are required for power management circuits.

Replacement Considerations

Consult official documentation for verified substitutes. Cross-referencing requires matching reverse voltage, forward current, and package dimensions. Verify thermal characteristics and internal circuit configuration before implementation.

FAQ

What is the maximum junction temperature for this component?

The maximum junction temperature is 175 °C.

How is the internal circuit configured?

The device features a cathode common dual type configuration.

What is the structure of the semiconductor element?

The structure is silicon epitaxial planar.