RB088BM200FNSTL

$1.77

Description：DIODE ARRAY SCHOT 200V 5A TO-252
Series：-

SKU:8b869c9e80f3 Category: Diode Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：DIODE ARRAY SCHOT 200V 5A TO-252
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：200 V
Current - Average Rectified (Io) (per Diode)：5A
Voltage - Forward (Vf) (Max) @ If：880 mV @ 5 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：7 µA @ 200 V
Operating Temperature - Junction：175°C
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252
Grade：-
Qualification：-

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RB088BM200FNSTL

Overview

The RB088BM200FNSTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration in a TO-252AA (D-Pak) surface-mount package. The device supports a repetitive peak reverse voltage of 200 V and an average rectified forward current of 10 A per diode. Key electrical parameters include a maximum forward voltage of 0.88 V at 5 A, a maximum reverse current of 7 μA at 200 V, and a peak forward surge current of 100 A. The component operates with a junction temperature up to 175 °C and utilizes ultra-low reverse leakage characteristics.

Feature Summary

Ultra-low reverse leakage current (IR) for improved efficiency
High reliability power mold type construction
Cathode common dual configuration

Applications

Switching power supplies

Procurement Notes

Verify the specific ordering suffix 'TL' corresponds to the required tape and reel packaging specifications before procurement. Confirm that the RoHS compliance status aligns with project requirements. Ensure the thermal design accounts for the specified junction-to-case resistance to prevent thermal runaway under load conditions.

Selection Notes

Select this component for applications requiring high-speed switching with low forward voltage drop. The TO-252 package offers a balance between current handling capability and board space constraints. Consider the 175 °C junction temperature rating for environments where elevated operating temperatures are expected.

Part Context

This part belongs to the RB088BM series of ultra-low IR Schottky barrier diodes from ROHM. The series is designed to address thermal runaway issues common in standard Schottky diodes at high temperatures through specialized blocking metal structures. The RB088BM200FNS variant serves as the base model for the FNSTL ordering designation.