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The RB088NS100TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with two elements. Key electrical parameters include a maximum repetitive reverse voltage of 110 V and a continuous forward current rating of 5 A per element. The device exhibits a maximum forward voltage of 870 mV at 5 A and a maximum reverse current of 5 uA at 100 V. It supports a non-repetitive peak forward surge current of 100 A and operates at junction temperatures up to +150 °C.
Verify the specific suffix TL against the manufacturer's datasheet to confirm packaging details such as reel size or cut tape specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with official ROHM documentation to distinguish between standard and automotive-grade variants within the RB088 series.
Select this component when a low forward voltage drop and minimal reverse leakage are required in a compact surface-mount form factor. The dual anode structure allows for flexible circuit topologies. Consider the thermal performance and the 150 °C maximum junction temperature limit for high-efficiency applications where heat dissipation is critical.
This component belongs to the RB088 series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and ultra-low reverse current, addressing thermal runaway issues common in standard Schottky diodes. The RB088NS100TL specifically targets applications needing robust performance in consumer electronics and automotive sectors.
Check for direct substitutes within the RB088 family, such as the RB088NS100FH, which shares similar electrical characteristics but may differ in qualification status. Verify pin compatibility and thermal resistance values before substituting any alternative Schottky diodes in existing designs.