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The RB088T150HZC9 is a Schottky barrier diode compliant with AEC-Q101 automotive standards. It features a cathode common dual configuration in a TO-220FN (3PIN) package. Key electrical parameters include a maximum reverse voltage of 150 V and an average rectified forward current of 10 A. The device exhibits a maximum forward voltage of 0.88 V at 5 A and a maximum reverse current of 0.015 mA at 150 V. It supports a junction temperature up to 150 °C and operates within a storage temperature range of -55 °C to 150 °C.
Verify the specific ordering suffix C9 to ensure correct packaging and terminal plating specifications. Confirm that the component status aligns with existing production requirements, as this part may be restricted for new designs. Cross-reference the RoHS compliance declaration and the AEC-Q101 qualification certificate to meet automotive quality standards before finalizing procurement orders.
Select this component when a dual Schottky diode with low forward voltage drop is required for automotive environments. The TO-220FN package provides robust thermal performance for high-current applications. Ensure the 150 V reverse voltage rating exceeds the peak inverse voltage in the circuit design. Consider the leaded mounting style if through-hole assembly is mandated by the PCB layout constraints.
This component belongs to the RB088T series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed to offer low forward voltage and ultra-low reverse current for improved efficiency. The RB088T150HZC9 specifically targets automotive markets requiring AEC-Q101 qualification, providing a reliable solution for power management systems where space and thermal dissipation are critical factors.
Public confirmed substitute part numbers: None identified.