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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 100V 3A TO252GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：3A
- Voltage - Forward (Vf) (Max) @ If：770 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：3 µA @ 100 V
- Operating Temperature - Junction：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252GE
- Grade：-
- Qualification：-
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Overview
The RB098BGE100TL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a surface-mount TO-252-3 (DPAK) package. It features a dual anode common cathode configuration with three terminals. Key electrical parameters include a maximum repetitive reverse voltage of 110 V and a continuous forward current rating of 6 A. The device exhibits a maximum forward voltage of 770 mV at 3 A and a low reverse leakage current of 3 µA. It supports a peak non-repetitive forward surge current of 100 A and operates within a junction temperature range up to +150 °C.
Feature Summary
- Dual anode common cathode configuration for efficient circuit design
- Super low reverse leakage current characteristics
- High reliability power mold type construction
- Surface mount installation style compatible with automated assembly
Applications
- Switching power supplies
- DC-DC converters
- Freewheeling diodes in inductive load circuits
Procurement Notes
Verify the specific suffix TL against the official datasheet to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status through the manufacturer's latest documentation. Check for end-of-life or not recommended for new design notices prior to finalizing procurement plans to ensure long-term supply stability.
Selection Notes
Select this component when a dual Schottky diode in a DPAK package is required for high-efficiency rectification. Ensure the application voltage does not exceed the 110 V repetitive reverse rating. Consider the thermal management requirements given the 150 °C maximum junction temperature limit and the 6 A current capacity.
Part Context
This part belongs to the RB098BGE series of super low IR Schottky barrier diodes from ROHM. It shares pinout compatibility with related variants such as the RB098BM100 and RB098BGE150, allowing for potential design flexibility within the same package footprint while adjusting voltage ratings.
Replacement Considerations
The RB098BGE100 is listed as a similar level replacement with the same pinout and package. Verify that the non-TL suffix variant meets all electrical and packaging requirements before substitution.
