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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTT 30V 3A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io) (per Diode)：3A
- Voltage - Forward (Vf) (Max) @ If：720 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：1.5 µA @ 30 V
- Operating Temperature - Junction：175°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：-
- Qualification：-
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Overview
The RB098BM-30FNSTL is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration within a TO-252M (D-Pak) surface-mount package. The device supports a repetitive peak reverse voltage of 35V and a continuous average rectified forward current of 6A per diode. It exhibits an ultra-low reverse leakage current of 1.5μA at 30V and a maximum forward voltage of 0.72V at 3A. The component operates with a junction temperature range up to 175°C and includes a thermal resistance from junction to case of 4.0°C/W.
Feature Summary
- Ultra-low reverse leakage current for improved efficiency
- High reliability power mold type construction
- Cathode common dual element configuration
Applications
- Switching power supplies
Procurement Notes
Verify the specific ordering suffix TL against the official datasheet to confirm tape-and-reel packaging specifications. Ensure the procurement matches the exact part number RB098BM-30FNSTL to guarantee correct marking B098BM30 and RoHS compliance. Confirm that the supplier provides the original manufacturer documentation for quality assurance.
Selection Notes
Select this component for applications requiring high-speed switching with minimal reverse recovery charge. The low forward voltage drop contributes to reduced power dissipation in high-current circuits. Verify that the thermal design accommodates the specified junction-to-case thermal resistance to maintain operation within the 175°C limit under load.
Part Context
This component belongs to the RB098BM series of Schottky barrier diodes designed for general-purpose rectification. It utilizes silicon epitaxial planar technology to ensure stable performance. The dual cathode common structure allows for efficient use of board space in compact electronic designs requiring two independent rectifying paths.
Replacement Considerations
Consult the official ROHM replacement guide for equivalent parts. Verify pinout compatibility and electrical ratings before substituting with other manufacturers' components.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
How is the internal circuit configured?
The internal circuit is configured as a cathode common dual type.
What is the reverse leakage current specification?
The maximum reverse leakage current is 1.5μA when measured at a reverse voltage of 30V.
