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The RB098BM-60FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for surface mount applications in the TO-252-3 (DPAK) package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 60V and an average forward current rating of 6A per diode. The device exhibits a low forward voltage of 770mV at 3A and minimal reverse leakage current of 3µA. It supports a peak forward surge current of 100A and operates at junction temperatures up to +150°C. The component holds AEC-Q101 automotive qualification.
Verify the specific suffix 'FHTL' against official datasheets to confirm tape-and-reel packaging and lead-free composition. Confirm current lifecycle status as manufacturers may update production recommendations. Ensure compatibility with existing PCB footprint dimensions for TO-252-3 packages during procurement planning.
Select this component when low reverse leakage is critical for system efficiency or standby power consumption. The TO-252-3 package offers robust thermal performance compared to smaller SMD options. Verify that the 60V reverse voltage rating provides sufficient margin for the specific circuit's peak inverse voltage requirements.
This part belongs to the RB098BM series of ultra-low IR Schottky barrier diodes. It is specifically engineered for automotive electronics requiring high reliability and low power loss. The series complements other ROHM Schottky products offering various voltage and current ratings within the same package family.
Check for direct pin-compatible alternatives within the RB098BM series with different voltage ratings if system voltages change. Verify thermal resistance characteristics when substituting with similar TO-252-3 Schottky diodes from other manufacturers.