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Product Detailed Parameters
- Description：DIODE ARRAY SCHOT 100V 3A TO-252
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io) (per Diode)：3A
- Voltage - Forward (Vf) (Max) @ If：770 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：3 µA @ 100 V
- Operating Temperature - Junction：175°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RB098BM100FHH is a cathode common dual Schottky barrier diode with a 100V reverse voltage rating and 6A average rectified forward current per diode. It features an ultra-low reverse current of 3μA maximum at 100V and a forward voltage of 0.77V maximum at 3A. The device supports a peak forward surge current of 100A and operates up to a junction temperature of 175°C. Packaged in a TO-252 (D-Pak) surface-mount housing, it is AEC-Q101 qualified for automotive reliability.
Feature Summary
- Cathode common dual configuration
- Ultra-low reverse leakage current
- High thermal stability with 175°C junction temperature
- Automotive grade AEC-Q101 qualification
Applications
- Switching power supplies
- Automotive electronic systems
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the TL suffix corresponds to the required embossed tape and reel packaging format. Ensure thermal management strategies account for the specified thermal resistance values to prevent thermal runaway under load conditions.
Selection Notes
Select this component when high reliability and low reverse leakage are critical for automotive or industrial switching applications. The dual cathode common structure simplifies circuit design for synchronous rectification or freewheeling tasks. Verify that the TO-252 package footprint aligns with the target PCB layout constraints.
Part Context
This part belongs to ROHM's line of silicon epitaxial planar Schottky barrier diodes designed for high-efficiency power conversion. It utilizes a power mold type construction to enhance mechanical strength and thermal dissipation capabilities compared to standard plastic packages.
Replacement Considerations
Consult the manufacturer's cross-reference data for verified substitutes. Ensure any replacement maintains the same AEC-Q101 qualification status and matches the TO-252 package dimensions for direct board compatibility.
FAQ
What is the maximum reverse current specification?
The maximum reverse current is 3μA when measured at a reverse voltage of 100V.
Is this component suitable for high-temperature environments?
Yes, the device is rated for a maximum junction temperature of 175°C.
How is the internal circuit configured?
The device contains two diodes connected in a cathode common dual configuration.
