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The RB098BM100TL is a dual Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252 (DPAK) surface-mount package. It features a common cathode configuration with two anodes. The device supports a maximum repetitive reverse voltage of 110 V and an average rectified forward current of 6 A. Key electrical characteristics include a low forward voltage of 770 mV at 3 A and a minimal reverse leakage current of 3 µA. It withstands a peak non-repetitive forward surge current of 100 A and operates at junction temperatures up to +150 °C.
Verify the specific suffix 'TL' against the official datasheet to confirm reel packaging specifications. Confirm RoHS compliance status as indicated in the manufacturer's documentation. Check for any recent lifecycle changes or obsolescence notices directly from ROHM Semiconductor before finalizing procurement plans.
Select this component for applications requiring a compact surface-mount solution with high current handling capabilities. Ensure the circuit design accommodates the 110 V reverse voltage rating and the 6 A continuous current limit. Verify that the TO-252 package thermal resistance meets the system's heat dissipation requirements under maximum load conditions.
This part belongs to the RB098 series of Schottky barrier diodes from ROHM Semiconductor. It is designed for general-purpose rectification and switching applications where low loss and fast recovery are critical. The TO-252 package provides a balance between current capacity and board space efficiency compared to larger through-hole alternatives.
The RB098BGE100TL is listed as a recommended replacement with similar pinout and package dimensions. Verify electrical parameter compatibility, particularly forward voltage and reverse current specifications, before substituting.