RB218BM200FHTL

Overview

The RB218BM200FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252-3 surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 200 V and an average forward current rating of 20 A. The device exhibits a maximum forward voltage of 880 mV at 10 A and a low reverse leakage current of 10 uA at 200 V. It supports a forward surge current of 100 A and operates at junction temperatures up to +150 °C. This component holds AEC-Q101 automotive qualification.

Feature Summary

• Dual anode common cathode configuration for efficient circuit design
• Ultra-low reverse leakage current characteristics suitable for high-temperature environments
• Automotive-grade reliability certified under AEC-Q101 standards
• High thermal stability with a maximum operating temperature of +150 °C

Applications

• Automotive switching power supplies
• Industrial equipment power circuits
• High-reliability rectification applications

Procurement Notes

Verify the active status of this component before integration, as related variants in the series may carry different lifecycle statuses. Confirm that the TO-252-3 package dimensions align with your PCB footprint requirements. Ensure that the 200 V reverse voltage and 20 A current ratings exceed your circuit's peak operational demands to maintain safety margins. Cross-reference the specific suffix FHTL to confirm reel packaging specifications and verify compliance with relevant RoHS directives for your target market.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive or industrial environments. The dual anode common cathode structure allows for flexible bridge or synchronous rectifier configurations. Its ultra-low leakage current minimizes heat generation compared to standard Schottky diodes, enhancing overall system efficiency. Ensure the application does not exceed the 100 A surge current limit during transient events to prevent device failure.

Part Context

This part belongs to the RB218 series of Schottky barrier diodes designed specifically for demanding applications. The series utilizes blocking metal technology to improve reverse leakage characteristics at elevated temperatures, addressing common thermal runaway issues found in traditional Schottky devices. These components are engineered to replace faster recovery diodes (FRDs) in power conversion stages, offering superior efficiency and reduced size constraints for modern electronic systems.

Replacement Considerations

The RB218BM200FH is listed as an alias for this component. Verify if the non-TL suffix denotes identical electrical specifications and packaging. Check for alternative packages like TO-263-3 if board space permits, though pinout compatibility must be confirmed.