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The RB218T-30NZC9 is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-220FN-3 through-hole package. The device supports a repetitive reverse voltage of 30 V and an average rectified forward current of 20 A. Key electrical characteristics include a maximum forward voltage of 0.72 V at 10 A and a maximum reverse current of 5 mA at 30 V. It withstands a forward surge current of 100 A and operates at junction temperatures up to +150 °C.
Verify the specific suffix 'C9' against official documentation to confirm tube packaging details. Confirm RoHS compliance status as indicated in manufacturer records. Ensure the component matches the TO-220FN-3 leaded type specification for your assembly process. Cross-reference the part number alias RB218T-30NZ if sourcing alternatives are considered.
Select this component when a dual common cathode Schottky diode is required for 30 V applications. The TO-220FN-3 package provides robust thermal performance for through-hole mounting. Consider the 20 A average current rating and low forward voltage drop for efficiency. Verify that the 150 °C maximum junction temperature meets the operational thermal requirements of the target system.
This component belongs to the RB218 series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by its use of blocking metal technology to improve reverse leakage current stability at high temperatures. This specific model utilizes a silicon substrate and is packaged in a standard three-terminal leaded format suitable for general-purpose rectification.
The RB218T-30HZC9 is a documented alternative within the same series. Both parts share identical pinouts and packages but differ in automotive qualification status. Verify functional equivalence before substitution.