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The RB225T-40 is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-efficiency rectification in power supply applications. It features a dual anode common cathode configuration housed in a TO-220FN-3 through-hole package. The device supports a repetitive reverse voltage of 40 V and an average forward current of 30 A. Key electrical characteristics include a maximum forward voltage of 630 mV at 15 A and a low reverse leakage current of 0.5 mA at 40 V. It withstands a forward surge current of 100 A and operates at junction temperatures up to +150°C.
Verify the specific suffix (e.g., HZC9) against the official datasheet to confirm automotive qualification status and packaging type. Ensure the selected variant matches the required reverse voltage and current ratings for the target application. Confirm RoHS compliance and lead times with authorized distributors prior to ordering.
Select this component when a through-hole solution with high current capacity is required for power conversion. The dual anode design simplifies circuit layout compared to discrete diode arrangements. Verify that the TO-220FN-3 package fits the mechanical constraints and thermal management strategy of the final assembly.
This part belongs to the RB225T series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by low forward voltage and fast switching speeds, making it suitable for high-frequency power applications. The TO-220FN-3 package provides robust mechanical mounting and effective heat dissipation for medium-power designs.
Check for direct substitutes within the same series or equivalent packages from other manufacturers. Ensure replacement parts match the 40 V reverse voltage, 30 A current rating, and TO-220FN-3 footprint. Verify pinout compatibility and thermal performance specifications before integration.