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The RB238T-30NZC9 is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-220FN-3 through-hole package. The device supports an average rectified forward current of 40 A and withstands a repetitive reverse voltage of 30 V. Key electrical parameters include a maximum forward voltage of 750 mV at 20 A and a maximum reverse leakage current of 12 mA at 30 V. It is qualified under the AEC-Q101 automotive standard and operates with a maximum junction temperature of +150 °C.
Verify the specific suffix 'C9' against the manufacturer's official documentation to confirm packaging details and compliance status. Confirm that the component is suitable for new designs, as related variants in this series may be marked as non-recommended for new projects. Ensure the TO-220FN-3 package dimensions match the target PCB footprint requirements before procurement.
Select this component when a robust, automotive-grade Schottky diode with a common cathode arrangement is required. The 40 A current rating and 30 V breakdown voltage define its operational limits. Consider the TO-220FN-3 package for through-hole mounting solutions requiring high thermal dissipation capabilities compared to surface-mount alternatives.
This part belongs to the RB238T series of Schottky barrier diodes from ROHM Semiconductor. The series is characterized by high reliability and low forward voltage drop. The RB238T-30NZC9 specifically denotes the 30 V variant within this family, utilizing the NZ suffix to identify the specific package and tape/reel or tube configuration provided by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with existing circuit designs if considering alternative manufacturers.