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The RB298NS100FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. The device supports an average rectified forward current of 30 A and withstands a repetitive reverse voltage of 100 V. Key electrical parameters include a maximum forward voltage of 0.87 V at 15 A and a maximum reverse current of 0.01 mA at 100 V. It is qualified under the AEC-Q101 automotive standard and operates within a junction temperature range up to +150 °C.
Verify the specific suffix 'HTL' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure the component meets AEC-Q101 requirements for your target application. Cross-reference the RoHS compliance status with the latest documentation provided by ROHM Semiconductor before finalizing procurement orders.
Select this component when a dual Schottky diode with high current capacity is required for automotive or industrial environments. The TO-263S package offers robust thermal performance compared to smaller surface-mount options. Consider the 0.87 V forward voltage drop for efficiency calculations in low-voltage, high-current DC-DC converter designs.
This part belongs to the RB298 series of Schottky barrier diodes from ROHM Semiconductor. The series is engineered for applications requiring high reliability and low reverse leakage current. The RB298NS100FHTL specifically utilizes a D2PAK-style package to handle higher currents while maintaining compatibility with standard surface-mount printing processes.
Check for direct substitutes such as the RB298T100HZ for through-hole alternatives or other RB298 variants with different current ratings. Verify pinout compatibility and thermal resistance values when replacing with components from other manufacturers.