RB495D

Overview

The RB495D is a Schottky barrier diode manufactured by Taiwan Semiconductor Corporation. It features a dual common cathode configuration within a compact SOT-23 surface-mount package. The device is rated for a maximum repetitive peak reverse voltage of 40V and an average forward rectified current of 350mA per element. Constructed using silicon epitaxial planar technology, it offers low forward voltage drop characteristics suitable for high-frequency switching applications.

Feature Summary

• Dual common cathode configuration providing two independent Schottky barriers in a single package
• Low forward voltage drop characteristic to minimize power loss during conduction
• Fast switching speed with minimal reverse recovery time for high-frequency efficiency
• Encapsulated in a small outline transistor (SOT-23) package for space-constrained designs

Applications

• General purpose rectification in low-voltage DC circuits
• Power supply input rectification stages
• Free-wheeling diodes in inductive load switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging specifications. Ensure the component source matches the authorized distributor list to prevent counterfeit parts. Cross-reference the date code and marking codes with the latest production documentation to validate authenticity and traceability before integration into final assemblies.

Selection Notes

Select this component when a dual Schottky configuration is required in a minimal footprint. Compare the 40V reverse voltage rating against circuit peak inverse voltages to ensure adequate margin. Evaluate the 350mA current rating relative to thermal dissipation requirements in the target application environment. Confirm compatibility with standard SOT-23 land patterns during PCB layout design.

Part Context

This part belongs to the RB495 series of Schottky barrier rectifiers produced by Taiwan Semiconductor. The series utilizes silicon epitaxial planar construction optimized for low leakage and fast recovery. It serves as a solid-state alternative to traditional junction rectifiers in low-voltage, high-efficiency power management systems requiring compact form factors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters with potential alternatives from other manufacturers before substitution.