RB496KATR

Overview

The RB496KATR is a Schottky barrier diode array manufactured by Rohm Semiconductor, housed in a TUMD5 surface-mount package. It features two independent diodes with a maximum DC reverse voltage of 20 V and an average rectified forward current of 1 A per diode. The forward voltage is specified at 430 mV when conducting 1 A, while the reverse leakage current reaches 800 µA at 10 V reverse bias. The device supports a junction temperature range up to 125°C and exhibits a recovery time of less than 500 ns for currents exceeding 200 mA.

Feature Summary

• Dual independent Schottky barrier configuration within a compact SMD footprint
• Low forward voltage drop characteristics for efficient power conversion
• High reliability design with low reverse leakage current specifications

Applications

• DC-DC converter circuits requiring fast switching
• Power supply input protection stages
• General purpose rectification in consumer electronics

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices, as availability may be limited. Ensure packaging specifications match production requirements before finalizing orders.

Selection Notes

Select this component for applications demanding low forward voltage and high-speed recovery in a small form factor. Compare leakage current limits against thermal constraints. Verify that the 20 V reverse voltage rating exceeds peak circuit voltages with adequate safety margin.

Part Context

This part belongs to Rohm's Schottky diode array series designed for surface-mount technology. It complements other variants like the RB496EA, offering specific electrical trade-offs between forward voltage and leakage current within the same functional category.

Replacement Considerations

The RB496EATR serves as a comparable alternative within the same series, featuring similar voltage and current ratings but differing in forward voltage and package type.