SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RB530XNTR is a triple Schottky barrier diode manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a silicon construction housed in an SOT-363-6 package. The device supports a maximum repetitive reverse voltage of 30 V and conducts a forward current of 100 mA. Key electrical characteristics include a typical forward voltage of 530 mV at 100 mA and a low reverse leakage current of 1 uA. It withstands a forward surge current of 1 A and operates reliably up to a maximum junction temperature of +125 C.
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and automotive qualification requirements if applicable to your design. Cross-reference the Mouser number 755-RB530XNTR for accurate distributor identification and lead time estimation prior to procurement.
Select this component when a triple-diode configuration is required to save board space compared to discrete single diodes. Ensure the 30 V reverse voltage rating exceeds the peak inverse voltage in the circuit. Verify that the 100 mA average forward current meets the load requirements and that the SOT-363-6 package fits the available footprint constraints.
This part belongs to the RB530XN series of triple Schottky barrier diodes from ROHM Semiconductor. It is categorized under Schottky Diodes & Rectifiers within the broader Diodes & Rectifiers subcategory. The series is engineered for efficient power management in small form-factor electronics, offering a balance of low loss and high switching speed.
Check for direct pin-compatible replacements within the same ROHM series or equivalent triple Schottky diodes from other manufacturers. Ensure substitute parts match the 30 V reverse voltage, 100 mA forward current, and SOT-363-6 package dimensions. Verify thermal and electrical parameter equivalence before implementation.