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Product Detailed Parameters
- Description：IGBT TRENCH 1250V 80A TO-247A
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1250 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.34V @ 15V, 40A
- Power - Max：319 W
- Switching Energy：2mJ (on), 1.4mJ (off)
- Input Type：Standard
- Gate Charge：85 nC
- Td (on/off) @ 25°C：25ns/124ns
- Test Condition：600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：156 ns
- Operating Temperature：175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247A
- Grade：-
- Qualification：-
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Overview
The RBN40H125S1FPQ-A0#CB0 is a trench-type Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 1250 V and a continuous collector current rating of 40 A. The component is designed for high-power switching applications, operating within a temperature range extending up to +175°C. This device utilizes advanced trench gate technology to optimize conduction losses and switching performance.
Feature Summary
- Trench gate architecture for optimized electrical performance
- High thermal stability supporting operation at elevated temperatures
- Robust voltage handling capability for industrial power systems
Applications
- Industrial motor drives
- Switching power supplies
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix and packaging configuration against official Renesas documentation before procurement. Confirm that the requested part number matches the exact electrical specifications required for the target application circuit. Check the current product status as components may be subject to obsolescence notices or lifecycle changes.
Selection Notes
Select this IGBT based on the requirement for high voltage blocking capability and substantial current handling in compact packages. Consider the thermal management requirements associated with the specified maximum operating temperature. Ensure the driving circuitry supports the switching characteristics inherent to trench gate technologies.
Part Context
This component belongs to the Renesas IGBT portfolio, which provides solutions for power electronics. The specific model integrates trench technology to enhance efficiency compared to older planar designs. It is intended for use in demanding environments where reliability and thermal performance are critical factors.
Replacement Considerations
Consult the official datasheet for direct pin-compatible substitutes. Verify electrical parameters such as voltage ratings and current limits when evaluating alternative parts from other manufacturers.
