RBQ10B65ATL

Overview

The RBQ10B65A is a silicon epitaxial planer Schottky barrier diode designed for general rectification. It features a power mold type (CPD) construction with low reverse leakage current and high reliability. The device supports an average rectified forward current of 10 A and a repetitive peak reverse voltage of 65 V. Key electrical characteristics include a maximum forward voltage of 0.69 V at 5 A, a maximum reverse current of 0.15 mA at 65 V, and a peak surge forward current capability of 50 A. It operates within a junction temperature range up to 150 °C.

Feature Summary

• Power mold type (CPD) construction
• Low reverse leakage current
• High reliability design

Applications

• General rectification

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the component meets all required environmental and safety standards for your intended application before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring robust general-purpose rectification with moderate voltage ratings. Ensure the thermal management design accommodates the specified junction temperature limits and derating curves provided in the datasheet to maintain optimal performance and longevity.

Part Context

This component belongs to the RBQ series of Schottky barrier diodes manufactured by ROHM Semiconductor. These devices are engineered for surface-mount applications, offering a compact form factor suitable for modern electronic equipment designs where space efficiency and reliable switching performance are critical requirements.

Replacement Considerations

Check for direct substitutes within the same product family or equivalent specifications from other manufacturers. Verify pinout compatibility and thermal characteristics when considering alternative components for existing designs.