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The RBQ10NS100ATL is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for general rectification applications. It features a dual anode common cathode configuration housed in a TO-263S (D2PAK) surface-mount package. The device utilizes silicon technology and supports a maximum operating temperature of +150°C. Key electrical parameters include a repetitive reverse voltage (Vrrm) of 100 V, an average forward current (If) of 10 A, and a peak forward surge current (Ifsm) of 50 A. The typical forward voltage (Vf) is 690 mV at 5 A, with a maximum reverse current (Ir) of 70 µA at 65 V.
Verify the specific suffix 'ATL' against the official ROHM datasheet to confirm tape-and-reel packaging specifications and lead-free plating compliance. Ensure the ordering part number matches the exact electrical tolerances required for the target application, as suffix variations may indicate different packaging or qualification standards.
Select this component when a 100 V rating and 10 A continuous current capacity are required in a compact surface-mount form factor. The dual anode common cathode structure allows for use in full-wave rectifier configurations without requiring additional components. Consider the thermal performance and package size relative to the PCB layout constraints.
This component belongs to the ROHM RBQ series of Schottky barrier diodes, which are engineered for low forward voltage and low reverse current. The series targets high-efficiency power management solutions in consumer electronics and industrial equipment. The TO-263S package provides robust thermal dissipation capabilities compared to smaller surface-mount alternatives.
Direct substitutes within the same family include RBQ10NS100AFH, which shares identical electrical characteristics but may differ in automotive qualification status. Verify pinout compatibility and thermal resistance values before substituting with generic equivalents from other manufacturers.