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The RBQ10NS45ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263S (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 45 V and an average rectified forward current of 10 A. The device exhibits a typical forward voltage of 550 mV at 5 A and a low reverse leakage current of 5 uA. It supports a non-repetitive peak forward surge current of 50 A and operates at junction temperatures up to +150 °C. This component holds AEC-Q101 qualification for automotive reliability.
Verify the specific suffix 'TL' against official manufacturer documentation to confirm tape and reel packaging specifications. Ensure the part number matches the exact electrical parameters required for your design, particularly the 45 V rating and 10 A current capacity. Cross-reference the AEC-Q101 qualification status if automotive compliance is mandatory for your application requirements.
Select this component when a dual common cathode Schottky diode is required in a D2PAK package. The 45 V rating suits low-voltage DC-DC converters and freewheeling applications. Consider the thermal performance of the TO-263S package for heat dissipation needs. Verify that the 10 A continuous current rating aligns with the system's operational load conditions.
This part belongs to the RBQ series of high-efficiency Schottky barrier diodes from ROHM. The series is designed for low forward voltage and low reverse current applications. The RBQ10NS45ATL specifically targets automotive and industrial markets requiring robust surface-mount solutions with proven reliability standards.
The RBQ10NS45AFHTL is a verified substitute within the same family, sharing identical electrical characteristics and package type. Confirm pinout compatibility and thermal resistance values before implementation.