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The RBQ15BGE45ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-252AA (D-PAK) surface-mount package. It features a common cathode dual configuration with a maximum repetitive reverse voltage of 45V and an average rectified forward current rating of 15A. The device supports a forward surge current of 100A and maintains a maximum junction temperature of 150°C. Key electrical characteristics include a maximum forward voltage of 0.59V at 7.5A and a maximum reverse leakage current of 0.14mA at 45V.
Verify the complete part number including the suffix to ensure correct packaging and tape specifications. Confirm RoHS compliance status matches project requirements. Check supply status as components may transition between recommended and obsolete states. Ensure the TO-252AA footprint aligns with the target PCB layout before finalizing procurement orders.
Select this component when a dual common cathode Schottky diode is required in a compact surface-mount package. The 45V rating suits low-voltage DC systems. Compare forward voltage and reverse leakage against alternatives to optimize thermal performance. Ensure the 15A current rating meets peak load demands without exceeding thermal limits.
This part belongs to ROHM's RBQ series of Schottky barrier diodes designed for general-purpose rectification. The series emphasizes low reverse current and high reliability. The TO-252AA package provides a balance between current handling capability and board space efficiency compared to larger through-hole options.
Direct substitutes within the same series include RBQ15BM45AFH for automotive-grade applications. Other variants like RBQ20BGE45A offer higher current ratings in the same package. Verify pinout compatibility and thermal characteristics before swapping.